2021 Power Electronics(Harbin Institute of Technology) 最新满分章节测试答案

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本课程起止时间为:2021-03-10到2021-12-03
本篇答案更新状态:已完结

Introduction of power electronics and devices Chapter 1 Test

1、 问题:Which of the following power electronic devices has the highest switching frequency?
选项：
A:SCR
B:GTR
C:IGBT
D:POWER MOSFET
答案: 【POWER MOSFET】

2、 问题:Which one does not belong to the advantages of power electronic devices?
选项：
A:When the device turns off, it can withstand high terminal voltage and the leakage current is approximately zero
B:When the device turns on, it can carry a large current, and the terminal voltage is approximately zero
C:The device can work in amplified state
D:The current can only flow through in one direction
答案: 【The device can work in amplified state】

3、 问题:Wide bandgap semiconductor material is used for making new power electronic switches, which of the following descriptions does not belong to its advantages?
选项：
A:High withstand voltage
B:Higher on-state resistance
C:Better thermal conductivity
D:Better thermal stability and strong radiation resistance
答案: 【Higher on-state resistance】

4、 问题:Which of the following descriptions does not belong to the advantages of Power Module?
选项：
A:Reducing the volume of the device, reducing the cost and improving the reliability
B:Reducing the line inductance greatly for high frequency circuits
C:Improving insulation and heat dissipation
D:Changing the electrical structure
答案: 【Changing the electrical structure】

5、 问题:Which of the following descriptions does not belong to the characteristics of IGBT?
选项：
A: High switching speed and low switching loss compared with thyristor
B:The safe working area of Power MOSFET is larger than that of GTR, and it is capable of withstanding strike of impulse current 
C: The driving power needed is larger than thyristor
D: Low on-state voltage drop
答案: 【 The driving power needed is larger than thyristor】

AC-DC conversion (Rectifier) Chapter 2 Test

1、 问题:Which description is not ture for ordinary Thyristor?
选项：
A:Inside is a double transistor model of PNPN four layer semiconductor structure
B:When conducting, it should be saturation conduction, and there is only a small leakage current when blocking
C:Current is Injected into the gate when it is turned on and extracted from the gate when it is turned off
D:There are three link ends, anode pole, cathode pole and gate pole
答案: 【Current is Injected into the gate when it is turned on and extracted from the gate when it is turned off】

2、 问题:Which description is ture in normal operation characteristics of Thyristor?
选项：
A:Due to the load inductance, thyristor may flow through the reverse anode current
B:As long as the gate has a trigger current, the thyristor can be turned on
C:Once the thyristor is turned on, the gate loses its control function
D:In order to turn off the thyristor conducting, the anode current flowing through the thyristor should be reduced below the holding current
答案: 【Once the thyristor is turned on, the gate loses its control function】

3、 问题:The RMS value of the secondary side voltage of the transformer is U2. The single-phase bridge controlled rectifier supplies power for resistive load. The maximum forward voltage and reverse voltage that the thyristor can withstand are respectively ( )
选项：
A:       
B:     
C:     
D:     
答案: 【     】

4、 问题:When the single-phase bridge controlled rectifier supplies power for large inductive load, its conduction angle q is ( )
选项：
A:a
B:90°
C:180°-a
D:180°
答案: 【180°】

5、 问题:As shown in the figure, the single-phase bridge controlled rectifier is loaded with a large inductance. The thyristor trigger phase range is ( )
选项：
A:a
B:90°
C:180°-a
D:180°
答案: 【90°】

6、 问题:As shown in the figure, the inductance of single-phase bridge controlled rectifier circuit is large enough, U2=200V，a=60°, the average rectifier voltage is ( )
选项：
A:127V
B:90V
C:180V
D:200V
答案: 【90V】

7、 问题:In the commutation process of three-phase half wave controlled rectifier, the incorrect description of natural commutation point is ( )
选项：
A: If the thyristor is replaced by diode, the time of commutation
B:The earliest time when thyristor can trigger conduction
C: Intersection time of phase voltage
D: Intersection time of line voltage
答案: 【 Intersection time of phase voltage】

8、 问题:When the load of three-phase half wave controlled rectifier is resistance, the maximum reverse voltage and maximum forward voltage of thyristor are respectively ( )
选项：
A:     
B:      
C:       
D:       
答案: 【      】

9、 问题:When the three-phase bridge controlled rectifier is loaded with resistance, what is the correct description of rectifier output voltage ( )
选项：
A:The instantaneous value of output voltage may be negative
B:When a=90°, the value of output voltage is 0
C:The output voltage decreases with the increase of trigger angle
D:The output voltage may be part of the phase voltage
答案: 【The output voltage decreases with the increase of trigger angle】

10、 问题: As shown in the figure, in the three-phase full-bridge controlled rectifier circuit, the trigger phase difference of the two adjacent thyristors VT1 and VT3 in the common cathode group is ()
选项：
A:60°
B:90°
C:120°
D:180°
答案: 【120°】

11、 问题:For the three-phase full-bridge controlled rectifier circuit driving an inductive load, the phase shift range of the trigger angle a is ()
选项：
A:60°
B:90°
C:120°
D:180°
答案: 【90°】

12、 问题:For the three-phase full-bridge controlled rectifier circuit corresponding to the waveform shown in the figure below, the trigger angle a of the thyristors is ()
选项：
A:60°
B:90°
C:120°
D:180°
答案: 【60°】

13、 问题:For the three-phase full-bridge controlled rectifier circuit driving a resistive load, the maximum reverse voltage and maximum forward voltage of the thyristors are respectively ()
选项：
A:     
B:   
C:    
D:    
答案: 【   】

14、 问题:For the three-phase full-bridge controlled rectifier circuit driving a resistance-inductive load, the maximum reverse voltage and maximum forward voltage of the thyristors are respectively ()
选项：
A:    
B:   
C: